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Áîëåå 1 000 000 datasheets íàïðèìåð: LM317
General Semiconductor 1N5059GP - 1N5059GP (General Semiconductor) - GLASS PASSIVATED JUNCTION RECTIFIER
| Íàèìåíîâàíèå: | 1N5059GP |
|---|---|
| Ïðîèçâîäèòåëü: | General Semiconductor |
| Ôàéë: | 1N5059GP_General Semiconductor.pdf |
| Ñêà÷àòü datasheet: |
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| Îïèñàíèå: | 1N5059GP THRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts D * DO-204AC 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA ♦ High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length at 5 lbs., (2.3kg) tension P A T E N T E 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters) *Glass -plastic encapsulation technique is covered by Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306 ® MECHANICAL DATA Case: JEDEC DO-204AC molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015 ounce, 0.4 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNITS * Maximum repetitive peak reverse voltage Maximum RMS voltage * Maximum DC blocking voltage * Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=75°C * Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) * Maximum instantaneous forward voltage at 1.0A, TA=75°C * Maximum full load reverse current, full cycle average 0.375" (9.5mm) lead length at TA=25°C TA=75°C * Maximum DC reverse current at rated DC blocking voltage Typical reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range TA= 25°C TA=175°C VRRM VRMS VDC I(AV) IFSM VF IR(AV) 200 140 200 400 280 400 1.0 50.0 1.2 5.0 150.0 5.0 300.0 2.0 15.0 45.0 20.0 600 420 600 800 560 800 Volts Volts Volts Amp Amps Volts µA µA µs pF °C/W °C IR trr CJ RΘJA RΘJL TJ, TSTG -65 to +175 NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC (3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted * JEDEC registered value 4/98 RATINGS AND CHARACTERISTIC CURVES 1N5059GP THRU 1N5062GP FIG. 1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 1.0 50 PEAK FORWARD SURGE CURRENT, AMPERES 60 HZ RESISTIVE OR INDUCTIVE LOAD TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0.8 40 30 0.6 0.4 20 10 0.2 0.375" (9.5mm) LEAD LENGTH 0 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, °C 1 10 NUMBER OF CYCLES AT 60 HZ 100 FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES 10 INSTANTANEOUS FORWARD CURRENT, AMPERES FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 10 TJ=125°C 1 TJ=25°C PULSE WIDTH=300µs 1 TJ=100°C 0.1 TJ=25°C 0.1 0.01 0 20 40 60 80 100 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 PERCENT OF RATED PEAK REVERSE VOLTAGE, % INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG. 5 - TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE (°C/W) FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE 30 JUNCTION CAPACITANCE, pF TJ=25°C f=1.0 MHZ Vsig=50mVp-p 100 10 10 1 0.1 0.01 0.1 1 10 100 1 1 10 REVERSE VOLTAGE, VOLTS t, PULSE DURATION, sec 100 |
