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Seme LAB 2N2060A - 2N2060A (Seme LAB) - DUAL AMPLIFIER TRANSISTOR
| Наименование: | 2N2060A |
|---|---|
| Производитель: | Seme LAB |
| Файл: | 2N2060A_Seme LAB.pdf |
| Скачать datasheet: |
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| Описание: | LAB MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) SEME 2N2060A DUAL AMPLIFIER TRANSISTOR 1.02 (0.040) Max. 12.7 (0.500) Min. 6.10 (0.240) 6.60 (0.260) Small Signal Dual Transistor in a TO–77 Hermetic Package. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 2.54 (0.100) 3 2 4 5 6 0.74 (0.029) 1.14 (0.045) 1 45Лљ 0.71 (0.028) 0.86 (0.034) TO–77 METAL PACKAGE PIN 1 – Collector PIN 2 – Base PIN 3 – Emitter PIN 4 – Emitter PIN 5 – Base PIN 6 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25В°C unless otherwise stated) VCEO VCER VCBO VEBO IC TJ , Tstg PD PD Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Operating and Storage Junction Temperature Range Total Device Dissipation Total Device Dissipation @ TA = 25В°C Derate above 25В°C @ TC = 25В°C Derate above 25В°C 60V 80V 100V 7V 500mA –65 to +200В°C Per Side Total Device 0.5W 0.6W 2.86mW/В°C 3.43mW/В°C 1.5W 3.0W 8.61mW/В°C 17.2mW/В°C Prelim. 4/96 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk LAB ELECTRICAL CHARACTERISTICS (TA = 25В°C unless otherwise stated) Parameter Test Conditions RBE ВЈ 10W IB = 0 IE = 0 IC = 0 TA = 150В°C IC = 0 VCE = 5V VCE = 5V VCE = 5V VCE = 5V IB = 5mA IB = 5mA VCE = 10V VCB = 10V VBE = 0.5V VCE = 5V VCB = 10V VCE = 5V 25 30 40 50 SEME 2N2060A Min. 80 60 100 7 Typ. Max. Unit V OFF CHARACTERISTICS VCER(sus)* Collector – Emitter Breakdown Voltage IC = 100mA VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 30mA V(BR)CBO V(BR)EBO ICBO IEBO Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current ON CHARACTERISTICS IC = 10mA hFE DC Current Gain IC = 100mA IC = 1mA IC = 10mA VCE(sat) VBE(sat) Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Cob Cib hie hib hfe hoe Current Gain Bandwidth Product Output Capacitance Input Capacitance Input Impedance Input Impedance Small Signal Current Gain Output Admittance MATCHING CHARACTERISTICS hFE1/hFE2 ВЅVBE1-VBE2ВЅ D(VBE1-VBE2) DT V V V 0.002 10 2.0 75 90 120 150 0.6 0.9 V — mA IC = 100mA IE = 100mA VCB = 80V IE = 0 VBE = 5V nA IC = 50mA IC = 50mA IC = 50mA f = 20MHz IE = 0 f = 1MHz IC = 0 f = 1MHz IC = 1mA f = 1kHz IC = 1mA f = 1kHz IC = 1mA f = 1kHz IC = 100mA IC = 1mA IC = 100mA IC = 1mA IC = 100mA 60 15 85 1000 20 50 4000 30 150 16 MHz pF pF W W — mmhos DC Current Gain Ratio 1 Base – Emitter Voltage Differential Base – Emitter Voltage Differential Change Due To Temperature VCE = 5V VCE = 5V VCE = 5V VCE = 5V VCE = 5V 0.9 0.9 1.0 1.0 3.0 5.0 5.0 — mV mV/В°C TA = –55 to +125В°C * Pulse Test: tp ВЈ 300ms, d ВЈ 2%. 1) The lowest hFE reading is taken as hFE1 for this ratio. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 4/96 |
