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Microsemi 2N2060 - 2N2060 (Microsemi) - UNITIZED DUAL NPN SILICON TRANSISTOR
| Наименование: | 2N2060 |
|---|---|
| Производитель: | Microsemi |
| Файл: | 2N2060_Microsemi.pdf |
| Скачать datasheet: |
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| Описание: | TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices 2N2060 2N2060L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC 2N2060 60 100 7.0 500 Unit Vdc Vdc Vdc mAdc One Both Section Sections Total Power Dissipation @ TA = +250C (1) 540 600 PT @ TC = +250C (2) 1.5 2.12 Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg 0 0 0 1) Derate linearly 3.08 mW/ C for TA > 25 C for one section, 3.48 mW/ C for both sections 2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections mW W 0 C TO-78* *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted) Characteristics Symbol V(BR)CER V(BR)CEO ICBO Min. 80 60 10 2.0 10 2.0 Max. Unit Vdc Vdc ВµAdc О·Adc ВµAdc О·Adc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) RBE ≤ 10 Ω, IC = 10 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VEB = 5.0 Vdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2060, 2N2060L JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 ВµAdc, VCE = 5.0 Vdc IC = 100 ВµAdc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 10 mAdc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Saturation Voltage IC = 50 mAdc, IB = 5.0 mAdc 25 30 40 50 75 90 120 150 0.3 0.9 Vdc Vdc hFE VCE(sat) VBE(sat) DYNAMIC CHARACTERISTICS Common Emitter Small-Signal Short-Circuit Forward-Current Transfer ratio IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz Small-Signal Short-Circuit Input Impedance IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Small-Signal Short-Circuit Input Impedance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Small-Signal Open-Circuit Output Admittance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Input Capacitance VEB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz (3)Pulse Test: Pulse Width 250 to 350Вµs, Duty Cycle ≤ 2.0%. пЈ¦hfeпЈ¦ hib hfe hie hoe Cibo Cobo 3 20 50 1,000 0 25 30 150 4,000 16 85 15 Ω Вµmhos pF pF Ω 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 |
