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Panasonic Semiconductor 2SA0886 - 2SA0886 (Panasonic Semiconductor) - Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
| Наименование: | 2SA0886 |
|---|---|
| Производитель: | Panasonic Semiconductor |
| Файл: | 2SA0886_Panasonic Semiconductor.pdf |
| Скачать datasheet: |
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| Описание: | Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 П† 3.16В±0.1 3.8В±0.3 Unit: mm 8.0+0.5 –0.1 3.2В±0.2 в– Absolute Maximum Ratings Ta = 25В°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating в€’50 в€’40 в€’5 в€’1.5 в€’3 1.2 150 в€’55 to +150 Unit V 4.6В±0.2 0.75В±0.1 0.5В±0.1 0.5В±0.1 2.3В±0.2 3 1.76В±0.1 V V A A W В°C В°C 1 2 в– Electrical Characteristics Ta = 25В°C В± 3В°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = в€’1 mA, IE = 0 IC = в€’2 mA, IB = 0 VCB = в€’20 V, IE = 0 VCE = в€’10 V, IB = 0 VEB = в€’5 V, IC = 0 VCE = в€’5 V, IC = в€’1 A IC = в€’1.5 A, IB = в€’ 0.15 A IC = в€’2 A, IB = в€’ 0.2 A VCB = в€’5 V, IE = 0.5 A, f = 200 MHz VCB = в€’20 V, IE = 0, f = 1 MHz 150 45 80 Min в€’50 в€’40 в€’1 в€’100 в€’10 220 в€’1.0 в€’1.5 Typ Max Unit V V ВµA ВµA ВµA пЈ§ V V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 80 to 160 R 120 to 220 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJD00003BED 16.0В±1.0 • Output of 4 W can be obtained by a complementary pair with 2SC1847 • TO-126B package which requires no insulation plate for installation to the heat sink 1.9В±0.1 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3.05В±0.1 в– Features 11.0В±0.5 1 2SA0886 PC пЈ§ Ta 1.6 –4.0 –3.5 IC пЈ§ VCE TC=25ЛљC IB=–40mA –35mA VCE(sat) пЈ§ IC Collector-emitter saturation voltage VCE(sat) (V) IC/IB=10 –10 Collector power dissipation PC (W) Collector current IC (A) 1.2 –3.0 –2.5 –30mA –25mA –20mA –1 0.8 –2.0 –15mA –1.5 –1.0 –0.5 –10mA –5mA TC=100ЛљC –0.1 0.4 25ЛљC –25ЛљC 0 0 40 80 120 160 0 0 –2 –4 –6 –8 –10 –0.01 –0.01 –0.1 –1 Ambient temperature Ta (В°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat) пЈ§ IC Base-emitter saturation voltage VBE(sat) (V) IC/IB=10 hFE пЈ§ IC 240 VCE=–5V fT пЈ§ I E VCB=–5V f=200MHz TC=25ЛљC –10 1000 Forward current transfer ratio hFE TC=100ЛљC 25ЛљC Transition frequency fT (MHz) 200 160 –1 TC=–25ЛљC 100ЛљC 25ЛљC 100 –25ЛљC 120 –0.1 10 80 40 –0.01 –0.01 –0.1 –1 1 –0.01 –0.1 –1 0 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob пЈ§ VCB Collector output capacitance C (pF) (Common base, input open circuited) ob –60 VCER пЈ§ RBE 1000 TC=25ЛљC ICEO пЈ§ Ta VCE=–12V 140 120 100 80 60 40 20 0 –1 Collector-emitter voltage (V) (Resistor between B and E) VCER IE=0 f=1MHz TC=25ЛљC –50 –30 ICEO (Ta) ICEO (Ta = 25В°C) –40 100 –20 10 –10 –10 –100 0 0.001 1 0.01 0.1 1 10 0 20 40 60 80 100 120 Collector-base voltage VCB (V) Base-emitter resistance RBE (kΩ) Ambient temperature Ta (В°C) 2 SJD00003BED 2SA0886 Safe operation area в€’10 ICP Single pulse TC=25ЛљC Rth пЈ§ t 104 (1)Without heat sink (2)With a 100Г—100Г—2mm Al heat sink Collector current IC (A) в€’1 IC t=10ms Thermal resistance Rth (В°C/W) 103 t=1s 102 (1) (2) в€’ 0.1 10 в€’ 0.01 1 в€’ 0.001 в€’ 0.1 в€’1 в€’10 в€’100 10в€’1 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector-emitter voltage VCE (V) Time t (s) SJD00003BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. |
