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Panasonic Semiconductor 2SK0601 - 2SK0601 (Panasonic Semiconductor) - Silicon N-Channel MOS FET
| Наименование: | 2SK0601 |
|---|---|
| Производитель: | Panasonic Semiconductor |
| Файл: | 2SK0601_Panasonic Semiconductor.pdf |
| Скачать datasheet: |
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| Описание: | Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 2.6В±0.1 4.5В±0.1 1.6В±0.2 1.5В±0.1 0.4max. 45Лљ 1.0–0.2 +0.1 0.4В±0.08 4.0–0.20 s Absolute Maximum Ratings (Ta = 25В°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature * 0.5В±0.08 1.5В±0.1 3.0В±0.15 0.4В±0.04 Symbol VDS VGSO ID IDP PD * Ratings 80 20 В±0.5 В±1 1 150 в€’55 to +150 Unit 3 2 1 V V A A W В°C В°C 1: Gate 2: Drain 3: Source EIAJ: SC-62 Mini-Power Type Package (3-pin) marking Tch Tstg Marking Symbol: O PC board: Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. s Electrical Characteristics (Ta = 25В°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton*2 toff *2 *1 Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100ВµA, VGS = 0 ID = 1mA, VDS = VGS ID = 0.5A, VGS = 10V ID = 0.2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz min typ max 10 0.1 Unit ВµA ВµA V 80 1.5 2 300 45 30 8 15 20 3.5 4 V Ω mS pF pF pF ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time *1 *2 Pulse measurement ton, toff measurement circuit Vout Vin = 10V 68Ω VDD = 30V Vout Vin 10% Vin 10% 90% 90% V t = 1ВµS f = 1MHZ out 50Ω ton toff 2.5В±0.1 +0.25 1 Silicon MOS FETs (Small Signal) PD пЈ§ Ta 1.6 1.2 Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. Ta=25ЛљC 1.0 VGS=5.5V 1.0 2SK601 ID пЈ§ VDS 1.2 VDS=10V Ta=25ЛљC ID пЈ§ VGS Allowable power dissipation PD (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 Drain current ID (A) 0.8 5V Drain current ID (A) 0.8 0.6 4.5V 0.6 0.4 4V 0.4 3.5V 0.2 3V 0 60 80 100 120 140 160 0 2 4 6 8 10 0 0 2 4 6 8 10 0.2 Ambient temperature Ta (ЛљC) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | пЈ§ VGS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 600 Ciss, Coss, Crss пЈ§ VDS VDS=15V f=1kHz Ta=25ЛљC VGS=0 f=1MHz Ta=25ЛљC RDS(on) пЈ§ VGS Drain to source ON-resistance RDS(on) (Ω) 6 ID=500mA 5 120 Forward transfer admittance |Yfs| (mS) 500 100 400 80 4 300 60 3 Ta=75ЛљC 2 25ЛљC –25ЛљC 200 40 Ciss 100 20 Coss 0 1 3 10 30 Crss 100 300 1000 1 0 0 1 2 3 4 5 6 0 0 4 8 12 16 20 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Gate to source voltage VGS (V) RDS(on) пЈ§ Ta Drain to source ON-resistance RDS(on) (Ω) 6 ID=500mA 5 4 VGS=5V 3 10V 2 1 0 –50 –25 0 25 50 75 Ambient temperature Ta (ЛљC) 2 |
