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Panasonic Semiconductor 2SK657 - 2SK657 (Panasonic Semiconductor) - For Switching
| Наименование: | 2SK657 |
|---|---|
| Производитель: | Panasonic Semiconductor |
| Файл: | 2SK657_Panasonic Semiconductor.pdf |
| Скачать datasheet: |
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| Описание: | Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 6.9В±0.1 (0.4) 2.5В±0.1 (1.0) (1.0) 3.5В±0.1 2.0В±0.2 2.4В±0.2 (1.5) (1.5) I Features 1.0В±0.1 (0.85) 1.25В±0.05 0.45В±0.05 0.55В±0.1 I Absolute Maximum Ratings (Ta = 25В°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 В±100 В±200 400 150 в€’55 to +150 Unit V V mA mA mW В°C В°C 1 (2.5) 2 (2.5) 3 1: Source 2: Drain 3: Gate EIAJ: SC-71 M-A1 Package Internal Connection D G S I Electrical Characteristics (Ta = 25В°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time * Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100ВµA, VGS = 0 ID = 100ВµA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω min typ max 10 50 3.5 50 15 6 1.2 50 1.5 20 10 20 Unit ВµA ВµA V V Ω mS pF pF pF ns ns ton, toff measurement circuit Vout 200Ω Vin VDD = 5V Vout 10% 10% 90% ton toff 90% 50Ω 100ВµF VGS = 5V Note) The part number in the parenthesis shows conventional part number. 4.1В±0.2 G High-speed switching G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. R 0.9 R 0.7 4.5В±0.1 1 Silicon MOS FETs (Small Signal) PD пЈ§ Ta 0.7 120 2SK0657 ID пЈ§ VDS 60 | Yfs | пЈ§ VGS Forward transfer admittance |Yfs| (mS) Ta=25ЛљC VDS=5V Ta=25ЛљC 50 Allowable power dissipation PD (W) 0.6 100 0.5 Drain current ID (mA) VGS=6.0V 80 5.5V 5.0V 60 40 0.4 0.3 4.5V 30 40 0.2 4.0V 3.5V 3.0V 2.5V 0 2 4 6 8 10 12 20 0.1 20 10 0 0 20 40 60 80 100 120 140 160 0 0 0 2 4 6 8 10 12 Ambient temperature Ta (ЛљC) Drain to source voltage VDS (V) Gate to source voltage VGS (V) Ciss, Coss, Crss пЈ§ VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 12 VGS=0 f=1MHz Ta=25ЛљC 120 ID пЈ§ VGS Drain to source ON-resistance RDS(on) (Ω) 120 VDS=5V Ta=25ЛљC 100 RDS(on) пЈ§ VGS ID=20mA 100 10 Ciss 8 Drain current ID (mA) 80 Ta=–25ЛљC 25ЛљC 80 6 60 75ЛљC 60 Ta=75ЛљC 25ЛљC –25ЛљC 4 Coss 2 Crss 1 3 10 30 100 40 40 20 20 0 0 0 2 4 6 8 10 12 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Gate to source voltage VGS (V) VIN пЈ§ IO 100 30 VO=5V Ta=25ЛљC Input voltage VIN (V) 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 2 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
