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STMicroelectronics 74AC10B - 74AC10B (STMicroelectronics) - TRIPLE 3-INPUT NAND GATE
Наименование:
74AC10B
Производитель:
STMicroelectronics
Файл:
74AC10B_STMicroelectronics.pdf
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Описание:
74AC10
TRIPLE 3-INPUT NAND GATE
PRELIMINARY DATA
s s
s
s
s
wiring C2MOS technology. It is ideal for low power applications mantaining high speed s operation similar to equivalent Bipolar Schottky TTL. s The internal circuit is composed of 3 stages including buffer output, which enables high noise s immunity and stable output. All inputs and outputs are equipped with DESCRIPTION protection circuits against static discharge, giving The AC10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with them 2KV ESD immunity and transient excess sub-micron silicon gate and double-layer metal voltage.
s
HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) 50Ω TRANSMISSION LINE DRIVING CAPABILITY SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 10 IMPROVED LATCH-UP IMMUNITY
B M (Plastic Package) (Micro Package) ORDER CODES : 74AC10B 74AC10M
PIN CONNECTION AND IEC LOGIC SYMBOLS
May 1997
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74AC10
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 1, 3, 9 2, 4, 10 13, 5, 11 12, 6, 8 7 14 SYMBOL 1A to 3A 1B to 3B 1C to 3C 1Y to 3Y GND VCC NAME AND F UNCTIO N Data Inputs Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage
TRUTH TABLE
A L X X H B X L X H C X X L H Y H H H L
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 В± 20 В± 20 В± 50 В± 150 -65 to +150 300 Unit V V V mA mA mA mA
o o
ICC or IGND DC VCC or Ground Current
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature: Input Rise and Fall Time VCC = 3.0, 4.5 or 5.5 V(note 1) Parameter Value 2 to 6 0 to VCC 0 to VCC -40 to +85 8 Un it V V V
o
C
ns/V
1) VIN from 30% to 70% of VCC
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74AC10
DC SPECIFICATIONS
Symbol Parameter V CC (V) VIH High Level Input Voltage 3.0 4.5 5.5 VIL Low Level Input Voltage 3.0 4.5 5.5 VOH High Level Output Voltage 3.0 4.5 5.5 3.0 4.5 5.5 VOL Low Level Output Voltage 3.0 4.5 5.5 3.0 4.5 5.5 II ICC IOLD IOHD Input Leakage Current Quiescent Supply Current Dynamic Output Current (note 1, 2) 5.5 5.5 5.5 V I (*) = V IH or V IL VI = V IH or V IL
(*)
Test Con dition s Min. VO = 0.1 V or VCC - 0.1 V VO = 0.1 V or VCC - 0.1 V I O=-50 ВµA IO=-50 ВµA IO=-50 ВµA IO=-12 mA IO=-24 mA IO=-24 mA IO=50 ВµA IO=50 ВµA IO=50 ВµA IO=12 mA IO=24 mA IO=24 mA VI = VCC or GND VI = VCC or GND VOLD = 1.65 V max VOHD = 3.85 V min 2.9 4.4 5.4 2.56 3.86 4.86 0.002 0.001 0.001 2.1 3.15 3.85 Typ. 1.5 2.25 2.75 1.5 2.25 2.75 2.99 4.49 5.49
Value T A = 25 oC Max. -40 to 85 o C Min . 2.1 3.15 3.85 0.9 1.35 1.65 2.9 4.4 5.4 2.46 3.76 4.76 0.1 0.1 0.1 0.36 0.36 0.36 В±0.1 4 0.1 0.1 0.1 0.44 0.44 0.44 В±1 40 75 -75 0.9 1.35 1.65 Max.
Unit
V
V
V
V
ВµA ВµA mA mA
1) Maximum test duration 2ms, one output loaded at time 2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω. (*) All outputs loaded.
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = t f =3 ns)
Symbol Parameter V CC (V) tPLH tPHL Propagation Delay Time 3.3 5.0(**)
(*)
T est Cond ition
Value T A = 25 oC -40 to 85 o C Min. Typ. Max. Min . Max. 1.5 1.5 5.5 4 8.5 6 1 1 10.0 7
Unit
ns
(*) Voltage range is 3.3V В± 0.3V (**) Voltage range is 5V В± 0.5V
CAPACITIVE CHARACTERISTICS
Symbol Parameter V CC (V) CIN C PD Input Capacitance Power Dissipation Capacitance (note 1) 5.0 5.0 Test Con dition s
o
Value T A = 25 C Min. Typ. 4.5 25 Max. -40 to 85 C Min . Max.
o
Unit
pF pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/n (per circuit)
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74AC10
TEST CIRCUIT
CL = 50 pF or equivalent (includes jig and probe capacitance) RL = R1 = 500Ω or equivalent RT =ZOUT of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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74AC10
Plastic DIP-14 MECHANICAL DATA
mm MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 inch TYP. MAX.
DIM.
P001A
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74AC10
SO-14 MECHANICAL DATA
DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010
P013G
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74AC10
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. В© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
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