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015A3.0 - 015A3.0-Diode Silicon Epitaxial Planar Type

Name:015A3.0
Producer:Toshiba Semiconductor
File:015A3.0.pdf
Download datasheet:Toshiba Semiconductor 015A3.0 - 015A3.0-Diode Silicon Epitaxial Planar Type Download
Description:Diode Silicon Epitaxial Planar Type
Detailed description:

TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE

015AZ2.0-015AZ12

CONSTANT VOLTAGE REGULATION APPLICATIONS    

• Small Package

• Nominal voltage tolerance about +2.5%    

(2.0V-12V)    

MAXIMUM RATINGS (Та = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Power Dissipation

p*

200

mW

Junction Temperature

Tj

125

°C

Storage Temperature Range

Tstg

-55-125

°C

 * Mounted on a glass epoxy circuit board of 20 X 20mm, Pad dimension of 4X4mm.

Toshiba  015AZ2.0-015AZ12
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