Archive : 19 May 2015 год

In a move which it claims as a breakthrough, Applied Materials has unveiled a new approach to patterning copper interconnects that is believed to be applicable at the 10nm node and beyond. 

In a move which it claims as a breakthrough, Applied Materials has unveiled a new approach to patterning copper interconnects that is believed to be applicable at the 10nm node and beyond.

According to the company, as process technology scales, innovation in hardmask technology is required in order to preserve the pattern integrity of tightly packed interconnect structures.

Interconnect alignment is currently performed using a titanium nitride (TiN) hardmask. However, as process dimensions get smaller, problems are encountered relating to film density and stress. Cirrus HTX is said to enable the TiN hardmask to be scaled to meet future patterning needs.

"Precision engineering of metal hardmask films is key to addressing the patterning challenges for advanced interconnects," said Dr Sundar Ramamurthy, general manager of Applied's Metal Deposition Products business unit. "Cirrus HTX, incorporating our VHF based technology, offers the flexibility of tuning stress in TiN films from compressive to tensile to overcome specific integration challenges."

Author
Graham Pitcher

Source:  www.newelectronics.co.uk

Fairchild claims it will reduce energy loss by 30% in its fourth generation 650V and 1200V IGBTs by using a novel design approach tailored for high and medium/speed switching applications in industrial and automotive markets.

According to the company, it is applying an advanced high density pitch, self balancing cell build using a novel self aligned contact technology for extremely high current densities and what it calls 'favourable' dynamic switching features over temperatures ranging from -40 to 175ºC. It adds this approach – which takes advantage of sub micron trench technology – will enable its fourth generation IGBTs to demonstrate a saturation voltage (Vce(sat)) of approximately 1.65V and a switching loss (Eoff) of 5µJ/A.

Compared to the previous generation, the new parts will not only cut energy loss by 30%, but also offer 'very strong' latch up immunity.

"Fairchild's new approach involves extremely high electron injection efficiency enhanced by a very fine cell pitch design and hole carrier injection restricted by a new buffer structure," said Fairchild Fellow Thomas Neyer. "These advances yield significant performance advantages and will enable Fairchild to give manufacturers new solutions for efficiently controlling large amounts of power with our IGBTs."

Product family details for Fairchild FS4 IGBT's will be made available in Q4 of 2015.

Author
Graham Pitcher

Source:  www.newelectronics.co.uk

MEMS specialist SiTime is addressing opportunities in the wearables and mobile markets with a new family of µPower MEMS oscillators. The first part to be announced, the SiT8021, is said to consume 90% less power than a quartz device, as well as being 40% smaller and 70% lighter.

MEMS specialist SiTime is addressing opportunities in the wearables and mobile markets with a new family of µPower MEMS oscillators. The first part to be announced, the SiT8021, is said to consume 90% less power than a quartz device, as well as being 40% smaller and 70% lighter.

Piyush Sevalia, executive vp of marketing at SiTime, said: "SiTime has used revolutionary technologies to deliver the µPower family of MHz MEMS oscillators. This new family breaks through the limitation of quartz technology and enables smaller electronic devices with dramatically longer battery life."

The SiT8021 is said to draw 100µA and to produce an output frequency in the range from 1MHz to 26MHz, with six decimal places of accuracy and a frequency stability of ±100ppm. Supplied in a package measuring 1.5 x 0.8mm, the oscillator runs from a 1.8V supply.

General sampling and mass production of the device is targeted for Q3 2015.

Author
Graham Pitcher

Source:  www.newelectronics.co.uk