Infineon Technologies has introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors. The devices are claimed to allow manufacturers of mobile base stations to build smaller, more powerful and more flexible transmitters.
With higher efficiency, improved power density and more bandwidth than currently used RF power transistors, these devices are said to improve the economics of building infrastructure to support cellular networks. Additionally, they pave the way for the transition to 5G technology with higher data volumes and enhanced user-experience.
“This new device family combines innovation with knowledge of the application requirements for cellular infrastructure to provide our global customer base with next-generation RF power transistors,” said Gerhard Wolf, vice president and general manager of Infineon’s RF Power product line. “Additionally, with the transition to wide bandgap semiconductor technology, we are setting the pace for the continued evolution of the cellular infrastructure.”
The RF power transistors are claimed to leverage the performance of GaN technology to achieve 10% higher efficiency and five times the power density of the LDMOS transistors commonly used. It is said that future GaN on SiC devices will support 5G cellular bands up to the 6GHz frequency range.
Author
Tom Austin-Morgan
Source: www.newelectronics.co.uk