Belgian research center imec says it has attained a conversion efficiency of 22.02% for its large area n-type PERT (passivated emitter, rear totally diffused) crystalline silicon solar cell. This, it adds, is the highest efficiency achieved for this type of two side-contacted solar cell on a 6in wafer.
Because they do not suffer from light induced degradation and have a higher tolerance to common metal impurities, n-type silicon solar cells are considered promising for next generation highly efficient solar cells.
Filip Duerinckx, manager of imec's n-PERT technology platform, said: "This new efficiency record has been achieved while simplifying the process, relying only on simplified cleans and without any expensive forming gas anneal. We are committed to further increasing the efficiency of this cell concept and adding to the industrial value of the technology."
Author
Graham Pitcher
Source: www.newelectronics.co.uk