First 16-die stacked NAND Flash Memory with TSV Technology
Toshiba has announced the development of a 16-die (max.) stacked NAND flash memory that uses Through Silicon Via (TSV) technology. The prototype will be shown at the Flash Memory Summit 2015, being held in Santa Clara, USA.
Traditional stacked NAND flash memories are connected together with wire bonding in a package, while TSV technology uses the vertical electrodes and vias to pass through the silicon dies for the connection. This enables high-speed data input and output, and reduces power consumption.
According to Toshiba the TSV technology is capable of achieving an I/O data rate of over 1Gbps which is higher than any other NAND flash memories with a low voltage supply: 1.8V to the core circuits and 1.2V to the I/O circuits and approximately a 50% power reduction of write operations, read operations, and I/O data transfers.
This new NAND flash memory provides a solution for low latency, high bandwidth and high IOPS/Watt in flash storage applications, including high-end enterprise SSD.
A part of this applied technology was developed by the New Energy and Industrial Technology Development Organization (NEDO).
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