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EIC Semiconductor 1N4007 - 1N4007 (EIC Semiconductor) - (1N4001 - 1N4007) Silicon Rectifier Diodes
| Наименование: | 1N4007 |
|---|---|
| Производитель: | EIC Semiconductor |
| Файл: | 1N4007_EIC Semiconductor.pdf |
| Скачать datasheet: |
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| Описание: | 1N4001 - 1N4007 BY133 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.335 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 В°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 В°C Maximum Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 Amp. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Reverse Recovery Time (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.) Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : Ta = 25 В°C Ta = 100 В°C SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BY133 UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 400 280 400 1.0 600 420 600 800 560 800 1000 700 1000 1300 1000 1300 V V V A IFSM VF IR IR(H) Trr CJ RОёJA TJ TSTG 30 1.1 5.0 50 2.0 15 26 - 65 to + 175 - 65 to + 175 A V ВµA ВµA Вµs pF В°C/W В°C В°C (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 05 : March 31, 2005 DataSheet4 U .com 4U RATING AND CHARACTERISTIC CURVES ( 1N4001 - BY133 ) 1.0 PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 Ta = 25 В°C 40 0.8 0.6 30 0.4 20 0.2 10 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( В°C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 FORWARD CURRENT, AMPERES Ta = 100 В°C 1.0 1.0 Pulse Width = 300 Вµs 2% Duty Cycle 0.1 TJ = 25 В°C 0.1 Ta = 25 В°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 05 : March 31, 2005 DataSheet4 U .com 4U |
