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Vishay Siliconix 1N4007 - 1N4007 (Vishay Siliconix) - (1N4001 - 1N4007) 1.0A RECTIFIER
| Наименование: | 1N4007 |
|---|---|
| Производитель: | Vishay Siliconix |
| Файл: | 1N4007_Vishay Siliconix.pdf |
| Скачать datasheet: |
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| Описание: | 1N4001/L - 1N4007/L 1.0A RECTIFIER POWER SEMICONDUCTOR Features • • • • • Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material: UL Flammability Classification Rating 94V-0 A B A C D Mechanical Data • • • • • • Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: DO-41 0.30 grams (approx) A-405 0.20 grams (approx) Mounting Position: Any Marking: Type Number Dim A B C D DO-41 Plastic Min 25.40 4.06 0.71 2.00 Max пЈ§ 5.21 0.864 2.72 A-405 Min 25.40 4.10 0.53 2.00 Max пЈ§ 5.20 0.64 2.70 All Dimensions in mm “L” Suffix Designates A-405 Package No Suffix Designates DO-41 Package Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TA = 75В°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient Maximum DC Blocking Voltage Temperature Operating and Storage Temperature Range (Note 3) @ IF = 1.0A @ TA = 25В°C @ TA = 100В°C @ TA = 25В°C unless otherwise specified 1N 1N 1N 1N 1N 1N 1N Symbol 4001/L 4002/L 4003/L 4004/L 4005/L 4006/L 4007/L VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RОёJA TA Tj, TSTG 15 100 +150 -65 to +175 50 35 100 70 200 140 400 280 1.0 30 1.0 5.0 50 8 600 420 800 560 1000 700 Unit V V A A V ВµA pF K/W В°C В°C Notes: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1. MHz and applied reverse voltage of 4.0V DC. 3. JEDEC Value DS28002 Rev. E-2 1 of 2 1N4001/L-1N4007/L I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A) 0.8 IF, INSTANTANEOUS FORWARD CURRENT (A) 1.0 10 1.0 0.6 0.4 0.1 0.2 Tj = 25ВєC PULSE WIDTH = 300Вµs 2% DUTY CYCLE 0 40 60 80 100 120 140 160 180 TA, AMBIENT TEMPERATURE (ВєC) Fig. 1 Forward Current Derating Curve 0.01 0.6 0.8 1.0 1.2 1.4 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 50 IFSM, PEAK FORWARD SURGE CURRENT (A) 100 Tj = 25ВєC f = 1MHz 40 30 Cj, CAPACITANCE (pF) 1N4001 - 1N4004 10 20 1N4005 - 1N4007 10 8.3ms Single half sine-wave JEDEC Method 0 1.0 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current 1.0 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 DS28002 Rev. E-2 2 of 2 1N4001/L-1N4007/L |
