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Panasonic Semiconductor 2SC4004 - 2SC4004 (Panasonic Semiconductor) - Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
| Наименование: | 2SC4004 |
|---|---|
| Производитель: | Panasonic Semiconductor |
| Файл: | 2SC4004_Panasonic Semiconductor.pdf |
| Скачать datasheet: |
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| Описание: | Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7В±0.1 s Features q q q q q 4.2В±0.2 10.0В±0.2 5.5В±0.2 4.2В±0.2 2.7В±0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25ЛљC) Ratings 900 900 800 7 2 1 0.3 30 2 150 –55 to +150 Unit V V V V A A A W ЛљC ЛљC 16.7В±0.3 7.5В±0.2 П†3.1В±0.1 4.0 1.7В±0.2 Solder Dip 1.3В±0.2 1.05В±0.1 0.8В±0.1 0.5–0.1 2.54В±0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25В°C dissipation Ta=25В°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 14.0В±0.5 5.08В±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(b) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25ЛљC) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.5A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A VCE = 10V, IC = 0.05A, f = 1MHz IC = 0.2A, IB1 = 0.04A, IB2 = – 0.04A, VCC = 250V 4 1.0 3.0 1.0 800 6 3 1.5 1.0 V V MHz Вµs Вµs Вµs min typ max 50 50 Unit ВµA ВµA V 1 Power Transistors PC — Ta 40 1.2 (1) TC=Ta (2) With a 100 Г— 100 Г— 2mm Al heat sink (3) With a 50 Г— 50 Г— 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25ЛљC 1.0 IB=140mA 120mA 100mA 80mA 0.6 60mA 40mA 0.4 20mA 0.2 2SC4004 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 100ЛљC 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25ЛљC 25ЛљC VCE(sat) — IC Collector power dissipation PC (W) 30 Collector current IC (A) (1) 0.8 20 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (ЛљC) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=5 1000 VCB=5V 1000 fT — IC VCE=10V f=1MHz TC=25ЛљC Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 0.3 1 3 10 300 10 100 100 3 30 TC=100ЛљC –25ЛљC 25ЛљC 30 1 TC=–25ЛљC 25ЛљC 100ЛљC 10 10 0.3 3 3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 0.1 1 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 1000 100 f=1MHz TC=25ЛљC 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=–IB2) VCC=200V TC=25ЛљC Area of safe operation (ASO) 10 3 Non repetitive pulse TC=25ЛљC ICP IC 10ms 0.3 DC 0.1 0.03 0.01 0.003 0.001 t=1ms Collector output capacitance Cob (pF) Switching time ton,tstg,tf (Вµs) 300 10 3 tstg 1 0.3 0.1 0.03 ton tf Collector current IC (A) 0.8 1 100 30 10 3 1 1 3 10 30 100 0.01 0 0.2 0.4 0.6 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 1.6 1.4 Lcoil=100ВµH IC/IB=5 (IB1=–IB2) TC=25ЛљC 2SC4004 Reverse bias ASO measuring circuit L coil IB1 T.U.T IC Collector current IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 200 400 600 800 1000 1200 1400 1600 IC Vin –IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) — t 10000 Note: Rth was measured at Ta=25ЛљC and under natural convection. (1) PT=10V Г— 0.2A (2W) and without heat sink (2) PT=10V Г— 1.0A (10W) and with a 100 Г— 100 Г— 2mm Al heat sink Thermal resistance Rth(t) (ЛљC/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 |
