Nanoelectronics research centre imec, in partnership with Ghent University, has developed an integrated graphene optical electro absorption modulator (EAM) capable of modulating at 10Gbit/s. According to the organisation, this is an important milestone in the development of high density, low power integrated optical interconnects.
Imec's graphene-silicon EAM consists of a 50µm long graphene-oxide-silicon capacitor structure implemented on top of a planarised silicon on insulator rib waveguide. It says high quality optical modulation was demonstrated in the device at rates of up to 10Gbit/s over a wavelength range of 80nm centred on 1550nm. No significant changes in performance were seen over temperatures ranging from 20 to 49°C, which imec says implies robust athermal operation.
"Imec has illustrated the huge potential of graphene optical EAMs with respect to thermal, bandwidth and footprint benefits," claimed Philippe Absil, pictured, director of imec's 3D and Optical Technologies department. "Future work will focus on improving the modulation speed of our graphene EAM, similar to the speed obtained in highly optimised Si(Ge) modulators."
Author
Graham Pitcher
Source: www.newelectronics.co.uk