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01BZA8.2-DIODES (DIODES FOR PROTECTING AGAINST ESD)

Name:

01BZA8.2

Producer:

Toshiba Semiconductor

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Description:

DIODES (DIODES FOR PROTECTING AGAINST ESD)

Detailed description:

TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE

01 BZA8.2

DIODES FOR PROTECTING AGAINST ESD

• Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC	SYMBOL	RATING	UNIT
Power Dissipation	P	100	mW
Junction Temperature	^T j	125	°C
Storage Temperature Range	Tstg	-55-125	°C

Toshiba 01BZA8.2

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01BZA8.2