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01ZAB8.2-DIODES( DIODES FOR PROTECTING AGAINST ESD)

Name:01ZAB8.2
Producer:Toshiba Semiconductor
Download datasheet:
Description:DIODES( DIODES FOR PROTECTING AGAINST ESD)
Detailed description:

TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE

01 ZA8.2

DIODES FOR PROTECTING AGAINST ESD    

• Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Power Dissipation

P

100

mW

Junction Temperature

T j

125

°C

Storage Temperature Range

Tstg

-55-125

°C

Toshiba 01ZA8.2

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