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APT1001RBLC-Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs

Name:APT1001RBLC
Producer:Advanced Power Technology
Download datasheet:
Description:Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
Others with the same file: APT1001RBLC
Datasheet APT1001RBLC - Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs page 1
Datasheet APT1001RBLC - Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs page 2