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DSEE6-06CC-

Name: DSEE6-06CC
Producer: IXYS
Download datasheet: Download
Description:
Detailed description:

HiPerDynFRED™ Epitaxial Diode ISOPLUS220™
Electrically Isolated Back Surface

IFAV =    6 A
VRRM = 600 V
trr = 20 ns
 

Symbol

Conditions

Maximum Ratings

IFRMS

 

20

A

IFAVM

TC = 150°C; rectangular, d = 0.5

6

A

EAS

TVJ = 25°C; non-repetitive

0.1

mJ

 

IAS = 0.8 A; L = 180 pH

  

IAR

VA = 1.5-Vr typ.; f = 10 kHz; repetitive

0.1

A

TVJ

 

-40...+175

°C

TVJM

 

175

°C

Tstg

 

-40...+150

°C

Ptot

TC = 25°C

50

W

VISOL

50/60 Hz RMS; IISOL < 1 mA

2500

V~

Fc

Mounting force

11 ...65 / 2.4...

11 N / lb

Weight

typical

2

g

Features

* Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

* Low cathode to tab capacitance (<15pF)

* Planar passivated chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Soft recovery behaviour

* Epoxy meets UL 94V-0

ISOPLUS 220 E153432

ISOPLUS 220 Outline

 

Others with the same file: DSEE6-06CC
Datasheet DSEE6-06CC - page 1
Datasheet DSEE6-06CC - page 2

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