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More 1 000 000 datasheetsexample: LM317
Search results: diode
| Name | Description | Manufacture |
|---|---|---|
| BAR80 | Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) | Siemens Semiconductor Group |
| BAR80 | Silicon RF Switching Diode | Infineon Technologies AG |
| BAR81 | Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | Siemens Semiconductor Group |
| BAR81W | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | Siemens Semiconductor Group |
| BAR81W | Silicon RF Switching Diode | Infineon Technologies AG |
| BAR88 | Silicon PIN Diode | Infineon Technologies AG |
| BAR88-02L | Silicon PIN Diode | Infineon Technologies AG |
| BAR88-02V | Silicon PIN Diode | Infineon Technologies AG |
| BAR88-07L4 | Silicon PIN Diode | Infineon Technologies AG |
| BAR88-099L4 | Silicon PIN Diode | Infineon Technologies AG |
| BAR89 | Silicon PIN Diode | Infineon Technologies AG |
| BAR89-02L | Silicon PIN Diode | Infineon Technologies AG |