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Search results: switches
| Name | Description | Manufacture |
|---|---|---|
| BAR63-04W | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) | Siemens Semiconductor Group |
| BAR63-05 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) | Siemens Semiconductor Group |
| BAR63-05W | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) | Siemens Semiconductor Group |
| BAR63-06 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) | Siemens Semiconductor Group |
| BAR63-06W | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) | Siemens Semiconductor Group |
| BAR63-W | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) | Siemens Semiconductor Group |
| BAR74 | Silicon Switching Diode | Infineon Technologies AG |
| BAR80 | Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) | Siemens Semiconductor Group |
| BAR80 | Silicon RF Switching Diode | Infineon Technologies AG |
| BAR81 | Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | Siemens Semiconductor Group |
| BAR81 | Silicon RF Switching Diodes | Infineon Technologies AG |
| BAR81W | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | Siemens Semiconductor Group |