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More 1 000 000 datasheetsexample: LM317
Search results: transistor
| Name | Description | Manufacture |
|---|---|---|
| IRFF120 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier |
| IRFF120 | (IRFF120 - IRFF123) N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State |
| IRFF121 | (IRFF120 - IRFF123) N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State |
| IRFF122 | (IRFF120 - IRFF123) N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State |
| IRFF123 | (IRFF120 - IRFF123) N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State |
| IRFF430 | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier |
| IRFF9110 | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier |
| IRFP251 | (IRFP252 / IRFP253) N-Channel(Hexfet Transistors) | IRF |
| IRFP450 | (IRFP450 - IRFP453) N-Channel Enhancement Mode Power MOS Transistors | ST Microelectronics |
| IRFP451 | (IRFP450 - IRFP453) N-Channel Enhancement Mode Power MOS Transistors | ST Microelectronics |
| IRFP452 | (IRFP450 - IRFP453) N-Channel Enhancement Mode Power MOS Transistors | ST Microelectronics |
| IRFP453 | (IRFP450 - IRFP453) N-Channel Enhancement Mode Power MOS Transistors | ST Microelectronics |