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More 1 000 000 datasheetsexample: LM317
Search results: IRF
| Name | Description | Manufacture |
|---|---|---|
| IRF520VS | Power MOSFET(Vdss=100V/ Rds(on)=0.165ohm/ Id=9.6A) | International Rectifier |
| IRF521 | N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs | Supertex Inc |
| IRF521 | N-Channel Power MOSFETs/ 11 A/ 60-100 V | Fairchild Semiconductor |
| IRF5210 | Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A) | International Rectifier |
| IRF5210L | Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A) | International Rectifier |
| IRF5210LPBF | HEXFET Power MOSFET | International Rectifier |
| IRF5210S | Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A) | International Rectifier |
| IRF5210SPBF | HEXFET Power MOSFET | International Rectifier |
| IRF522 | N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs | Supertex Inc |
| IRF523 | N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs | Supertex Inc |
| IRF523 | N-Channel Power MOSFETs/ 11 A/ 60-100 V | Fairchild Semiconductor |
| IRF530 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | Motorola Inc |
