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More 1 000 000 datasheetsexample: LM317
Search results: IRF
| Name | Description | Manufacture |
|---|---|---|
| IRF531 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF532 | N-Channel Power MOSFETs/ 20 A/ 60-100 V | Fairchild Semiconductor |
| IRF532 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | Motorola Inc |
| IRF532 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF533 | N-Channel Power MOSFETs/ 20 A/ 60-100 V | Fairchild Semiconductor |
| IRF533 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | Motorola Inc |
| IRF533 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF540 | N-channel TrenchMOS transistor | Philips Semiconductors |
| IRF540 | N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET | STMicroelectronics |
| IRF540 | N-Channel Power MOSFETs/ 27 A/ 60-100V | Fairchild Semiconductor |
| IRF540 | HEXFET POWER MOSFET | International Rectifier |
| IRF540 | TMOS E-FET Power Field Effect Transistor | Motorola Semiconductor |