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| Name | Description | Manufacture |
|---|---|---|
| IRF821 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF822 | N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V | Fairchild Semiconductor |
| IRF822 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF823 | N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V | Fairchild Semiconductor |
| IRF823 | N-CHANNEL Enhancement-Mode Silicon Gate TMOS | Motorola Inc |
| IRF823 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF830 | N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET | STMicroelectronics |
| IRF830 | N-CHANNEL ENHANCEMENT MODE | TRSYS |
| IRF830 | 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| IRF830 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| IRF830B | 500V N-Channel MOSFET | Fairchild Semiconductor |
| IRF831 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| IRF832 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| IRF833 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| IRF840 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | Motorola Inc |
| IRF840 | N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET | STMicroelectronics |
| IRF840 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF840 | 8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| IRF840 | TRANSISTORS N-CHANNEL | International Rectifier |
| IRF840 | 500V N-Channel MOSFET | Fairchild Semiconductor |
| IRF8401111 | TRANSISTORS N-CHANNEL | International Rectifier |
| IRF841 | TRANSISTORS N-CHANNEL | International Rectifier |
| IRF841 | N-Channel Power MOSFETs/ 8A/ 450 V/500V | Fairchild Semiconductor |
| IRF841 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | Motorola Inc |
| IRF841 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF842 | TRANSISTORS N-CHANNEL | International Rectifier |
| IRF842 | N-Channel Power MOSFETs/ 8A/ 450 V/500V | Fairchild Semiconductor |
| IRF842 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | Motorola Inc |
| IRF843 | TRANSISTORS N-CHANNEL | International Rectifier |
| IRF843 | N-Channel Power MOSFETs/ 8A/ 450 V/500V | Fairchild Semiconductor |
| IRF843 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | Motorola Inc |
| IRFAC40 | 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
| IRFAC42 | 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
| IRFB4615PBF | N-Channel HEXFET Power MOSFET | International Rectifier |
| IRFBC30 | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET | STMicroelectronics |
| IRFBC40 | N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET | STMicroelectronics |
| IRFBC40 | 6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| IRFBC40 | 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs | Harris Corporation |
| IRFC250 | High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | IXYS Corporation |
| IRFD020 | (IRFD020 / IRFD022) HEXFET TRANSISTORS N-CHANNEL HEXDIP | IOR |
| IRFD020 | N Channel Enhancement Mode Transistor | Siliconix |
| IRFD022 | (IRFD020 / IRFD022) HEXFET TRANSISTORS N-CHANNEL HEXDIP | IOR |
| IRFD110 | 1A/ 100V/ 0.600 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| IRFD120 | 1.3A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| IRFD120 | N-Channel Power MOSFET | Fairchild Semiconductor |
| IRFD120 | (IRFD123) N-Channle Enhancement Mode Transistors | Siliconix |
| IRFD120 | (IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs | Harris Semiconductor |
| IRFD121 | (IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs | Harris Semiconductor |
| IRFD122 | (IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs | Harris Semiconductor |
| IRFD123 | (IRFD123) N-Channle Enhancement Mode Transistors | Siliconix |
