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More 1 000 000 datasheetsexample: LM317
Search results: N
| Name | Description | Manufacture |
|---|---|---|
| BF256A | N-Channel RF Amplifiers | Fairchild Semiconductor |
| BF256B | VHF/UHF Amplifier(N-Channel/ Depletion) | Motorola Inc |
| BF256B | N-Channel RF Amplifiers | Fairchild Semiconductor |
| BF256C | VHF/UHF Amplifier(N-Channel/ Depletion) | Motorola Inc |
| BF256C | N-Channel RF Amplifiers | Fairchild Semiconductor |
| BF410 | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | Siemens Semiconductor Group |
| BF410A | N-channel silicon field-effect transistors | Philips Semiconductors |
| BF410A | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | Siemens Semiconductor Group |
| BF410B | N-channel silicon field-effect transistors | Philips Semiconductors |
| BF410B | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | Siemens Semiconductor Group |
| BF410C | N-channel silicon field-effect transistors | Philips Semiconductors |
| BF410C | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | Siemens Semiconductor Group |
| BF410D | N-channel silicon field-effect transistors | Philips Semiconductors |
| BF410D | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | Siemens Semiconductor Group |
| BF510 | N-channel silicon field-effect transistors | Philips Semiconductors |
| BF511 | N-channel silicon field-effect transistors | Philips Semiconductors |
| BF512 | N-channel silicon field-effect transistors | Philips Semiconductors |
| BF513 | N-channel silicon field-effect transistors | Philips Semiconductors |
| BF543 | Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) | Siemens Semiconductor Group |
| BF543 | Silicon N-Channel MOSFET Triode | Infineon Technologies AG |
| BF545A | N-channel silicon junction field-effect transistors | Philips Semiconductors |
| BF545B | N-channel silicon junction field-effect transistors | Philips Semiconductors |
| BF545C | N-channel silicon junction field-effect transistors | Philips Semiconductors |
| BF556A | N-channel silicon junction field-effect transistors | Philips Semiconductors |
| BF556B | N-channel silicon junction field-effect transistors | Philips Semiconductors |
| BF556C | N-channel silicon junction field-effect transistors | Philips Semiconductors |
| BF861 | N-channel junction FETs | Philips Semiconductors |
| BF861A | N-channel junction FETs | Philips Semiconductors |
| BF861B | N-channel junction FETs | Philips Semiconductors |
| BF861C | N-channel junction FETs | Philips Semiconductors |
| BF862 | N-channel junction FET | Philips Semiconductors |
| BF901 | Silicon n-channel dual gate MOS-FETs | Philips Semiconductors |
| BF901R | Silicon n-channel dual gate MOS-FETs | Philips Semiconductors |
| BF904 | N-channel dual gate MOS-FETs | Philips Semiconductors |
| BF904A | N-channel dual gate MOS-FETs | Philips Semiconductors |
| BF904AR | N-channel dual gate MOS-FETs | Philips Semiconductors |
| BF904AWR | N-channel dual gate MOS-FETs | Philips Semiconductors |
| BF904R | N-channel dual gate MOS-FETs | Philips Semiconductors |
| BF904WR | N-channel dual-gate MOS-FET | Philips Semiconductors |
| BF908WR | N-channel dual-gate MOS-FET | Philips Semiconductors |
| BF909 | N-channel dual gate MOS-FETs | Philips Semiconductors |
| BF909R | N-channel dual gate MOS-FETs | Philips Semiconductors |
| BF909WR | N-channel dual-gate MOS-FET | Philips Semiconductors |
| BF960 | N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE | Vishay Telefunken |
| BF961 | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay Telefunken |
| BF963 | Silicon N-Channel MOSFET Tetrode | Siemens |
| BF964 | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay Telefunken |
| BF964S | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay Telefunken |
| BF965 | Silicon N-Channel MOSFET Tetrode | Siemens |
| BF966 | N-Channel Dual Gate MOS Fieldeffect Tetrod | Telefunken |
