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More 1 000 000 datasheetsexample: LM317
Search results: N
| Name | Description | Manufacture |
|---|---|---|
| GT30J121 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
| GT30J301 | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT30J311 | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT30J322 | N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS) | Toshiba Semiconductor |
| GT30J324 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
| GT3585 | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
| GT40M101 | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | Toshiba Semiconductor |
| GT40M301 | N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS) | Toshiba Semiconductor |
| GT40Q323 | Silicon N Channel IGBT / Voltage Resonance Inverter Switching Application | Toshiba Semiconductor |
| GT40QR21 | Silicon N-Channel IGBT | Toshiba |
| GT40T101 | N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) | Toshiba Semiconductor |
| GT40T301 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
| GT40T302 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
| GT50G321 | TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba Semiconductor |
| GT50J102 | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT50J301 | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT50J322 | N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) | Toshiba Semiconductor |
| GT50J325 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
| GT5G103 | N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
| GT5J301 | N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT5J311 | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT5J331(SM) | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT60M104 | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | Toshiba Semiconductor |
| GT60M301 | N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) | Toshiba Semiconductor |
| GT60M302 | N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) | Toshiba Semiconductor |
| GT60M303 | N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) | Toshiba Semiconductor |
| GT60M322 | Silicon N Channel IGBT | Toshiba |
| GT60M323 | Silicon N Channel IGBT | Toshiba |
| GT60N322 | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | Toshiba Semiconductor |
| GT6301K | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
| GT6924E | N-CHANNEL MOSFET | GTM |
| GT80J101 | N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) | Toshiba Semiconductor |
| GT8G103 | N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
| GT8G121 | N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
| GT8G131 | N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
| GT8G132 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
| GT8J101 | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT8J102SM | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT8Q101 | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT8Q102 | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT8Q102SM | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GTC217E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
| GTC220E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
| GTC9922E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
| GTC9926 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
| GTC9926E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
| GTS217E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
| GTS9922E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
| GTS9926 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
| GTS9926E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
