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Search results: 3
| Name | Description | Manufacture |
|---|---|---|
| JAN5821US | (JAN5820US - JAN5822US) 3 AMP SCHOTTKY BARRIER RECTIFIERS | Microsemi Corporation |
| JAN5822US | (JAN5820US - JAN5822US) 3 AMP SCHOTTKY BARRIER RECTIFIERS | Microsemi Corporation |
| JANSR2N7410 | 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET | Intersil Corporation |
| JANTX2N6782 | POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.60ohm/ Id=3.5A) | International Rectifier |
| JANTX2N6786 | POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=3.6ohm/ Id=1.25A) | International Rectifier |
| JANTX2N6790 | POWER MOSFET N-CHANNEL(BVdss=200V/ Rds(on)=0.80ohm/ Id=3.5A) | International Rectifier |
| JANTX2N6794 | POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=3.0ohm/ Id=1.5A) | International Rectifier |
| JANTX2N6800 | POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A) | International Rectifier |
| IZ1503 | Supply Votage(V) : 2.0~3.6 | IK Semiconductor |
| IZ1517 | Supply Vlotage(V) : 2.0~3.6 | IK Semiconductor |
| JANTXV2N6782 | POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.60ohm/ Id=3.5A) | International Rectifier |
| JANTXV2N6786 | POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=3.6ohm/ Id=1.25A) | International Rectifier |
| JANTXV2N6790 | POWER MOSFET N-CHANNEL(BVdss=200V/ Rds(on)=0.80ohm/ Id=3.5A) | International Rectifier |
| JANTXV2N6794 | POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=3.0ohm/ Id=1.5A) | International Rectifier |
| JANTXV2N6800 | POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A) | International Rectifier |
| JMS539 | SuperSpeed USB to SATA II 3.0G Bridge | JMicron |
| JRC2381 | 3 mm Round LED | IDEA |
| JS5822 | 3 AMP SCHOTTKY BARRIER RECTIFIERS | Compensated Deuices Incorporated |
| JS5822US | 3 AMP SCHOTTKY BARRIER RECTIFIERS | Compensated Deuices Incorporated |
| JV5822 | 3 AMP SCHOTTKY BARRIER RECTIFIERS | Compensated Deuices Incorporated |
| JV5822US | 3 AMP SCHOTTKY BARRIER RECTIFIERS | Compensated Deuices Incorporated |
| JX5822 | 3 AMP SCHOTTKY BARRIER RECTIFIERS | Compensated Deuices Incorporated |
| JX5822US | 3 AMP SCHOTTKY BARRIER RECTIFIERS | Compensated Deuices Incorporated |
| JXM19500 | 25 Amp / 3 Phase / Bridge Rectifier Assembly | Sensitron |
| K1573A | 3.3V Voltage Controlled Crystal Oscillators | Champion |
| K1613 | 3.3V Voltage Controlled Temperature Compensated Crystal Oscillators | Champion |
| K25S | 1.5A - 3.0A Forward Current / 3000 ns Recovery Time | Voltage Multipliers |
| K4S280432I | (K4S28xx32I) JEDEC standard 3.3V power supply LVTTL compatible | Samsung Semiconductor |
| K4S280832I | (K4S28xx32I) JEDEC standard 3.3V power supply LVTTL compatible | Samsung Semiconductor |
| K4S281632I | (K4S28xx32I) JEDEC standard 3.3V power supply LVTTL compatible | Samsung Semiconductor |
| K4S643232E | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) | Samsung semiconductor |
| K4S643232E- | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) | Samsung semiconductor |
| K4S643232E-TE50 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) | Samsung semiconductor |
| K4S643232E-TE60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) | Samsung semiconductor |
| K4S643232E-TE70 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) | Samsung semiconductor |
| K4S643232E-TN50 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) | Samsung semiconductor |
| K4S643232E-TN60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) | Samsung semiconductor |
| K4S643232E-TN70 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) | Samsung semiconductor |
| K6R1004C1D-JC(I)10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1004C1D-JC(I)10/12 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1004C1D-JC(I)12 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1004V1D-JC(I)08 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1004V1D-JC(I)10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1008C1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1008C1D-J(T)C(I)10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1008C1D-J(T)C(I)12 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1008V1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1008V1D-J(T)C(I)08 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1008V1D-J(T)C(I)10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |
| K6R1016C1 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor |