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Search results: V
| Name | Description | Manufacture |
|---|---|---|
| AT-33225 | 4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones | Agilent(Hewlett-Packard) |
| AT-33225-BLK | 4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones | Agilent(Hewlett-Packard) |
| AT-33225-TR1 | 4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones | Agilent(Hewlett-Packard) |
| AT-36408-BLK | 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones | Agilent(Hewlett-Packard) |
| AT-36408-TR1 | 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones | Agilent(Hewlett-Packard) |
| AT-38086 | 4.8 V NPN Silicon Bipolar Common Emitter Transistor | Agilent(Hewlett-Packard) |
| AT-38086-BLK | 4.8 V NPN Silicon Bipolar Common Emitter Transistor | Agilent(Hewlett-Packard) |
| AT-38086-TR1 | 4.8 V NPN Silicon Bipolar Common Emitter Transistor | Agilent(Hewlett-Packard) |
| ATH30 | 3.3-V Input Non-Isolated Wide-Output Adjust Power Module | Astec |
| ATMEGA88 | (ATMEGAxx8/V) 8-bit Microcontroller | ATMEL Corporation |
| ATmega88P | (ATmegaxxxP/V) 8-bit Microcontroller | ATMEL Corporation |
| ATmega88V | (ATmegaxxxP/V) 8-bit Microcontroller | ATMEL Corporation |
| ATR0610 | 2.7 V GPS LOW NOISE AMPLIFIER | ATMEL Corporation |
| ATR0610-PQQ | 2.7 V GPS LOW NOISE AMPLIFIER | ATMEL Corporation |
| ATMEGA168 | (ATMEGAxx8/V) 8-bit Microcontroller | ATMEL Corporation |
| ATmega168P | (ATmegaxxxP/V) 8-bit Microcontroller | ATMEL Corporation |
| ATMEGA168V | (ATMEGAxx8/V) 8-bit Microcontroller | ATMEL Corporation |
| ATmega168V | (ATmegaxxxP/V) 8-bit Microcontroller | ATMEL Corporation |
| ATmega328P | (ATmegaxxxP/V) 8-bit Microcontroller | ATMEL Corporation |
| ATmega328V | (ATmegaxxxP/V) 8-bit Microcontroller | ATMEL Corporation |
| ATMEGA48 | (ATMEGAxx8/V) 8-bit Microcontroller | ATMEL Corporation |
| ATmega48P | (ATmegaxxxP/V) 8-bit Microcontroller | ATMEL Corporation |
| ATMEGA48V | (ATMEGAxx8/V) 8-bit Microcontroller | ATMEL Corporation |
| ATmega48V | (ATmegaxxxP/V) 8-bit Microcontroller | ATMEL Corporation |
| AWT6221R | HELP3 Dual-band Cellular/PCS UMTS 3.4 V HSPA Linear Power Amplifier Module | ANADIGICS |
| AWT6273 | HELP3 Cellular/WCDMA 3.4 V/29 dBm Linear Power Amplifier Module | ANADIGICS |
| AWT6278 | HELP3 PCS/WCDMA 3.4 V/29.5 dBm HSPA Linear Power Amplifier Module | ANADIGICS |
| AWT6279 | HELP3 IMT/WCDMA 3.4 V/28.5 dBm HSPA Linear Power Amplifier Module | ANADIGICS |
| AWC6323 | HELP3E Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifer Module | Anadigics |
| AY5362X | CYLINDRICAL V-CUT LED LAMP | Stanley Electric |
| BAL6309 | Spurious V-Pluse Generator | Rohm |
| BA5410 | 12 V-5.2 W dual channel power amplifier | Rohm |
| BAX280 | FRED Diode (VRRM 1000 V IFRMS 5.5 A 55 ns Soft recovery characteristics) | Siemens Group |
| BB112 | Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V) | Siemens Group |
| BB512 | Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V) | Siemens Group |
| BBY24-BBY27 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) | Siemens Group |
| BBY24-S1 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) | Siemens Group |
| BBY25-S1 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) | Siemens Group |
| BBY26-S1 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) | Siemens Group |
| BBY27-S2 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) | Siemens Group |
| BBY33DA-2 | Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) | Siemens Group |
| BBY34C | Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) | Siemens Group |
| BBY34D | Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) | Siemens Group |
| BBY35F | Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) | Siemens Group |
| BF1009 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network | Siemens Semiconductor Group |
| BFP520 | NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) | Siemens Semiconductor Group |
| BS107 | N-Channel 200-V (D-S) MOSFETs | Vishay Siliconix |
| BS107KL | N-Channel 240 -V (D-S) MOSFET | Vishay Siliconix |
| BS107KL-TR1 | N-Channel 240 -V (D-S) MOSFET | Vishay Siliconix |
| BS170 | N-Channel 60-V (D-S) MOSFET | Vishay Siliconix |