Miniature photocoupler in SDIP
Toshiba Electronics Europe (TEE) has launched a miniature photocoupler that delivers the same isolation and current outputs as previous DIP packaged devices in a form factor that is 50% smaller. The TLP700 has an isolation voltage of 5000Vrms and a common mode transient immunity rating of ±10kV/µs. Suitable for use in IGBT and power MOSFET gate drive circuits, the device has a peak output current of 2.0A, allowing it to directly drive some low power IGBTs up to around 50A. Operating with a supply voltage of between 15V and 30V, the TLP700 keeps power consumption to a minimum through a maximum supply current of 2mA. Maximum switching time is rated at 500ns. The photocoupler comprises a GaAlAs infrared LED and a photodetector IC in the SDIP six-pin packaging measuring 6.8mm x 4.58mm x 3.65mm. The device has been designed to meet the requirements of all relevant international safety approvals and delivers guaranteed performance at temperatures between -40°C and 100°C.