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More 1 000 000 datasheetsexample: LM317
Search results: IRF
| Name | Description | Manufacture |
|---|---|---|
| IRF822 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF823 | N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V | Fairchild Semiconductor |
| IRF823 | N-CHANNEL Enhancement-Mode Silicon Gate TMOS | Motorola Inc |
| IRF823 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF830 | PowerMOS transistor Avalanche energy rated | Philips Semiconductors |
| IRF830 | N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET | STMicroelectronics |
| IRF830 | N-CHANNEL ENHANCEMENT MODE | TRSYS |
| IRF830 | 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| IRF830 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| IRF830 | POWER MOSFET | ETC |
| IRF830AL | Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A) | International Rectifier |
| IRF830APBF | HEXFET Power MOSFET | International Rectifier |