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Search results: IRF
| Name | Description | Manufacture |
|---|---|---|
| IRF830AS | Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A) | International Rectifier |
| IRF830B | 500V N-Channel MOSFET | Fairchild Semiconductor |
| IRF830S | Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A) | International Rectifier |
| IRF831 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| IRF8313PBF | Power MOSFET | International Rectifier |
| IRF832 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| IRF833 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| IRF840 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | Motorola Inc |
| IRF840 | PowerMOS transistor Avalanche energy rated | Philips Semiconductors |
| IRF840 | N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET | STMicroelectronics |
| IRF840 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
| IRF840 | 8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET | Intersil Corporation |