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Vishay Introduces 1200 V SiC MOSFET Power Modules in SOT-227 Packages

Malvern, PA – January 28, 2026 – Vishay Intertechnology, Inc. (NYSE: VSH) announced the launch of five new 1200 V silicon carbide (SiC) MOSFET power modules designed to boost power efficiency in medium- to high-frequency applications across automotive, energy, industrial, and telecom sectors.

Vishay SiC MOSFET module in SOT-227 package]

The new Vishay Semiconductors devices - VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 - feature the company's latest-generation SiC MOSFET technology with integrated soft body diodes. This design significantly reduces reverse recovery losses and enables faster, more efficient switching.

Key Features and Benefits

• Rated voltage: 1200 V (VDSS)
• Continuous drain current: 50 A to 200 A
• Low on-resistance (RDS(on)): down to 12.1 mΩ (for 200 A version)
• Maximum junction temperature: +175 °C
• Industry-standard SOT-227 package for drop-in replacement
• Electrical isolation up to 2500 V for 1 minute
• Configurations: single-switch or low-side chopper

These modules help minimize conduction and switching losses, reduce heatsink requirements, and support higher operating frequencies - leading to smaller magnetics, simpler cooling, and overall system efficiency gains.

Table of specifications for VS-SF series modules]

Target Applications

The devices are ideal for:

• DC/DC converters and off-board EV chargers
• Solar inverters and power systems
• Switched-mode power supplies (SMPS)
• UPS systems and HVAC drives
• Battery energy storage and telecom power units

Available in RoHS-compliant SOT-227 molded packages, the modules serve as easy drop-in replacements for existing designs, eliminating the need for PCB layout changes while upgrading to advanced SiC performance.

SiC power module in application or close-up view]

Samples and production quantities are available now, with lead times of 13 weeks.