Malvern, PA – January 28, 2026 – Vishay Intertechnology, Inc. (NYSE: VSH) announced the launch of five new 1200 V silicon carbide (SiC) MOSFET power modules designed to boost power efficiency in medium- to high-frequency applications across automotive, energy, industrial, and telecom sectors.
Vishay SiC MOSFET module in SOT-227 package]
The new Vishay Semiconductors devices - VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 - feature the company's latest-generation SiC MOSFET technology with integrated soft body diodes. This design significantly reduces reverse recovery losses and enables faster, more efficient switching.
Key Features and Benefits
- Rated voltage: 1200 V (VDSS)
- Continuous drain current: 50 A to 200 A
- Low on-resistance (RDS(on)): down to 12.1 mΩ (for 200 A version)
- Maximum junction temperature: +175 °C
- Industry-standard SOT-227 package for drop-in replacement
- Electrical isolation up to 2500 V for 1 minute
- Configurations: single-switch or low-side chopper
These modules help minimize conduction and switching losses, reduce heatsink requirements, and support higher operating frequencies - leading to smaller magnetics, simpler cooling, and overall system efficiency gains.
Table of specifications for VS-SF series modules]
Target Applications
The devices are ideal for:
- DC/DC converters and off-board EV chargers
- Solar inverters and power systems
- Switched-mode power supplies (SMPS)
- UPS systems and HVAC drives
- Battery energy storage and telecom power units
Available in RoHS-compliant SOT-227 molded packages, the modules serve as easy drop-in replacements for existing designs, eliminating the need for PCB layout changes while upgrading to advanced SiC performance.
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SiC power module in application or close-up view]
Samples and production quantities are available now, with lead times of 13 weeks.