Toshiba has announced the latest generation of BiCS FLASH, its 3D flash memory. The latest version is a 64 layer device that incorporates 3bit/cell technology, enabling 256Gbit to be stored. Toshiba says its next target is a 512Gbit device, also with 64 layers.
Previously, Toshiba was producing a 48 layer device and the move to 64 layers is said to provide 40% more capacity in the same chip size, along with a lower cost per bit. Applications are expected to include enterprise and consumer solid state drives, smartphones, tablets and memory cards.
The 64 layer devices will be manufactured in New Fab 2 at Yokkaichi Operations, which was opened officially earlier this month. Mass production is scheduled to start in the first half of 2017.
Author
Graham Pitcher
Source: www.newelectronics.co.uk