09N03 — даташит Pan Jit International

 25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request

MECHANICAL DATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-202,Method 208 • Marking : 09N03

Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )