Electronics News
Archive : 15 June 2026 год
Rohm Semiconductor has launched the TSC3PAK, a new surface-mount power package designed for high-voltage silicon carbide (SiC) MOSFETs. The package features top-side cooling architecture that delivers thermal performance comparable to traditional through-hole packages while enabling automated assembly and higher power density.
Rohm TSC3PAK — new surface-mount power package for high-voltage applications
Key Features
- Top-side cooling structure for superior heat dissipation
- Supports 1200V-class SiC MOSFETs
- 6.66 mm creepage distance for enhanced insulation reliability
- Thermal performance comparable to conventional through-hole packages
- Compatible with automated surface-mount assembly processes
- Compact footprint for higher power density designs
The proprietary groove structure in the package enables the required creepage distance while maintaining compatibility with standard industry footprints. This allows designers to use surface-mount technology in high-voltage systems without compromising safety or reliability.
Target Applications
- Onboard chargers and electric compressors in EVs and HEVs
- Photovoltaic (solar) inverters
- Server power supplies
- Industrial power conversion equipment
- Other high-voltage power electronics
The TSC3PAK package helps automotive and industrial designers achieve better thermal management, higher efficiency, and more compact layouts while benefiting from the advantages of automated production.
Source: Electronics For You