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Даташиты (Datasheets) электронных компонентов
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| Наименование | Описание | Производитель |
|---|---|---|
| ISLA110P50 | 500MSPS A/D Converter | Intersil |
| ISLA112P50 | 500MSPS A/D Converter | Intersil |
| ISLA118P50 | 500MSPS A/D Converter | Intersil |
| ISPLSI2032 | (ISPLSI2032/A) In-System Programmable SuperFAST High Density PLD | Lattice Semiconductor |
| ISPLSI2032A | (ISPLSI2032/A) In-System Programmable SuperFAST High Density PLD | Lattice Semiconductor |
| K101 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K102 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K104 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K301 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K302 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K304 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K3610 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K3611 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K3620 | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K3621 | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4H1G0438A | (K4H1G0438A / K4H1G0838A) 1Gb A-die SDRAM Specification | Samsung semiconductor |
| K4H2G0638A | Stacked 2Gb A-die SDRAM Specification | SAMSUNG |
| K4N25 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N25A | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N25G | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N25H | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N26 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N27 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N28 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N29 | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N29A | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N30 | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N31 | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N32 | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N35 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N36 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N37 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N38 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4N38A | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K4R761869A | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor |
| K4T1G044QA | 1Gb A-die DDR2 SDRAM Specification | Samsung semiconductor |
| K4T1G044QA-ZCE6 | 1Gb A-die DDR2 SDRAM Specification | Samsung semiconductor |
| K4T1G044QQ | (K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification | Samsung semiconductor |
| K4T1G084QA-ZCE6 | 1Gb A-die DDR2 SDRAM Specification | Samsung semiconductor |
| K4T1G084QQ | (K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification | Samsung semiconductor |
| K4T1G164QA-ZCE6 | 1Gb A-die DDR2 SDRAM Specification | Samsung semiconductor |
| K4T1G164QD | (K4T1G084QD / K4T1G164QD) 1Gb A-die DDR2 SDRAM Specification | Samsung semiconductor |
| K4T1G164QQ | (K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification | Samsung semiconductor |
| K5610 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K5611 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K5620 | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K5621 | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K7D321874A | 32Mb A-die DDR SRAM Specification | Samsung semiconductor |
| K7D323674A | 32Mb A-die DDR SRAM Specification | Samsung semiconductor |
| K9GBG08U0A | 32Gb A-die NAND Flash | Samsung |