Даташиты (Datasheets)
Даташиты (Datasheets) электронных компонентов
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| Наименование | Описание | Производитель |
|---|---|---|
| FRC-Exxx | (FRC-E Series) PCB Connectors | DDK |
| IRF540 | TMOS E-FET Power Field Effect Transistor | Motorola Semiconductor |
| ISL6113 | (ISL6113 / ISL6114) Dual Slot PCI-E Hot Plug Controllers | Intersil Corporation |
| ISL6114 | (ISL6113 / ISL6114) Dual Slot PCI-E Hot Plug Controllers | Intersil Corporation |
| ISPMACH4ACPLDFAMILY | High Performance E 2 CMOS In-System Programmable Logic | Lattice Semiconductor |
| K4R271669E | 128Mbit RDRAM(E-die) | Samsung semiconductor |
| K4S280432E | 128Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S280432E-TC75 | 128Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S280432E-TL75 | 128Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S280832E-TC75 | 128Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S280832E-TL75 | 128Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S281632E-TC60 | 128Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S281632E-TC75 | 128Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S281632E-TL60 | 128Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S281632E-TL75 | 128Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S560432E-NC | 256Mb E-die SDRAM Specification 54pin sTSOP-II | Samsung semiconductor |
| K4S560432E-NC(L)75 | 256Mb E-die SDRAM Specification 54pin sTSOP-II | Samsung semiconductor |
| K4S560432E-TC | 256Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S560432E-TC75 | 256Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S560432E-TL75 | 256Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S560832E-NC(L)75 | 256Mb E-die SDRAM Specification 54pin sTSOP-II | Samsung semiconductor |
| K4S560832E-TC75 | 256Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S560832E-TL75 | 256Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S561632E | 256Mb E-die SDRAM Specification 54pin sTSOP-II | Samsung semiconductor |
| K4S561632E-NC(L)60 | 256Mb E-die SDRAM Specification 54pin sTSOP-II | Samsung semiconductor |
| K4S561632E-TC75 | 256Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S561632E-TL60 | 256Mb E-die SDRAM Specification | Samsung semiconductor |
| K4S561632E-TL75 | 256Mb E-die SDRAM Specification | Samsung semiconductor |
| K4T1G044QE | 1Gb E-die DDR2 SDRAM | Samsung Electronics |
| K4T1G084QE | 1Gb E-die DDR2 SDRAM | Samsung Electronics |
| K4T1G164QE | 1Gb E-die DDR2 SDRAM | Samsung Electronics |
| K4T51043QE | 512Mb E-die DDR2 SDRAM Specification | Samsung semiconductor |
| K4T51163QE | 512Mb E-die DDR2 SDRAM Specification | Samsung semiconductor |
| KSB1149 | Low Collector Saturation Voltage Built-in Damper Diode at E-C | Fairchild Semiconductor |
| KSD1692 | NPN (HIGH DC CURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C) | Samsung semiconductor |
| KSD5018 | Built-in Resistor at B-E for Motor Drive | Fairchild Semiconductor |
| LA7848 | TV Vertical Output + E/W Driver | Sanyo |
| LA7849 | E/W DRIVE | Sanyo |
| LH1263 | E & M Signaling Circuit | Agere Systems |
| LM6402A | (LM6402A / LM6405A) E/D MOS LSI | Sanyo Semiconductor |
| LM6402G | (LM6402G/05G) N CHANNEL E/D MOS LSI 4 BIT MICROCOMPUTER | Sanyo Semicon Device |
| LM6402L | (LM6402L / LM6405L) E/D MOS LSI | Sanyo Semiconductor |
| LM6405A | (LM6402A / LM6405A) E/D MOS LSI | Sanyo Semiconductor |
| LM6405G | (LM6402G/05G) N CHANNEL E/D MOS LSI 4 BIT MICROCOMPUTER | Sanyo Semicon Device |
| LM6405L | (LM6402L / LM6405L) E/D MOS LSI | Sanyo Semiconductor |
| LM8031 | (LM8031 / LM8051) E/D MOS LSI | Sanyo Semiconductor |
| LM8051 | (LM8031 / LM8051) E/D MOS LSI | Sanyo Semiconductor |
| LM8854 | E/D MOS LSI | Sanyo Semiconductor |
| LRI512 | Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz / ISO 15693 Standard Compliant with E.A.S. | STMicroelectronics |
| LX8382-00 | 10 A LOW DROPOUT POSITIV E REGULATORS | Microsemi Corporation |