Даташиты (Datasheets)
Даташиты (Datasheets) электронных компонентов
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| Наименование | Описание | Производитель |
|---|---|---|
| FU-68SDF-V810M198B | 1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) | Mitsubishi Electric Semiconductor |
| FU-68SDF-V810M200B | 1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) | Mitsubishi Electric Semiconductor |
| FU-68SDF-V810M201B | 1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) | Mitsubishi Electric Semiconductor |
| FU-68SDF-V810M202B | 1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) | Mitsubishi Electric Semiconductor |
| FU-68SDF-V810M203B | 1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) | Mitsubishi Electric Semiconductor |
| FU-68SDF-V810M204B | 1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) | Mitsubishi Electric Semiconductor |
| FU-68SDF-V810M205B | 1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) | Mitsubishi Electric Semiconductor |
| FU-68SDF-V810M207B | 1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) | Mitsubishi Electric Semiconductor |
| HWF1682RA | L-Band GaAs Power FET | ETC |
| HWF1687RA | L-Band GaAs Power FET | Hexawave |
| HY57V281620HCT | (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM | Hynix Semiconductor |
| HY57V281620HLT | (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM | Hynix Semiconductor |
| HY57V281620HST | (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM | Hynix Semiconductor |
| HY5DU281622DT | (HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM | Hynix Semiconductor |
| HY5DU281622LT | (HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM | Hynix Semiconductor |
| HY5DU28422DT | (HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM | Hynix Semiconductor |
| HY5DU28422LT | (HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM | Hynix Semiconductor |
| HY5DU28822DT | (HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM | Hynix Semiconductor |
| HY5DU28822LT | (HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM | Hynix Semiconductor |
| HY5DU561622AT | (HY5DU56xx22A(L)T) 256M-S DDR SDRAM | Hynix Semiconductor |
| HY5DU561622CF | (HY5DU56xxxC(L)F) 256M DDR SDRAM | Hynix Semiconductor |
| HY5DU561622LT | (HY5DU56xx22A(L)T) 256M-S DDR SDRAM | Hynix Semiconductor |
| HY5DU56422AT | (HY5DU56xx22A(L)T) 256M-S DDR SDRAM | Hynix Semiconductor |
| HY5DU56422CF | (HY5DU56xxxC(L)F) 256M DDR SDRAM | Hynix Semiconductor |
| HY5DU56422LT | (HY5DU56xx22A(L)T) 256M-S DDR SDRAM | Hynix Semiconductor |
| HY5DU56422T | (HY5DU56xxx(L)T) 2nd 256M DDR SDRAM | Hynix Semiconductor |
| HY5DU56822AT | (HY5DU56xx22A(L)T) 256M-S DDR SDRAM | Hynix Semiconductor |
| HY5DU56822CF | (HY5DU56xxxC(L)F) 256M DDR SDRAM | Hynix Semiconductor |
| HY5DU56822LT | (HY5DU56xx22A(L)T) 256M-S DDR SDRAM | Hynix Semiconductor |
| HY5DU56822T | (HY5DU56xxx(L)T) 2nd 256M DDR SDRAM | Hynix Semiconductor |
| HY5S6B6 | (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM | Hynix Semiconductor |
| HY5S6B6D | (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM | Hynix Semiconductor |
| HY5S6B6x | (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM | Hynix Semiconductor |
| HZS6L | (HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application | Renesas Technology |
| HZS6L1 | (HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application | Renesas Technology |
| HZSxL | (HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application | Renesas Technology |
| IRF740AL | (IRF740AS/L) Power MOSFET | International Rectifier |
| IRFZ34L | (IRFZ34S/L) Power MOSFET | International Rectifier |
| IRFZ34NL | (IRFZ34NS/L) Power MOSFET | International Rectifier |
| IRFZ34NS | (IRFZ34NS/L) Power MOSFET | International Rectifier |
| IRFZ34S | (IRFZ34S/L) Power MOSFET | International Rectifier |
| IRG4BC10SD-S | (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| IRG4BC15UD-S | (IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| K4H281638L | 128Mb L-die DDR SDRAM Specification | Samsung semiconductor |
| M5M44400AWJ | (J/L/TP/RT) Fast Page Mode 4MBit DRAM | Mitsubishi |
| M5M44400BJ | (BJ/L/TP/RT) Fast Page Mode 4MBit DRAM | Mitsubishi |
| MAAM37000-A1 | L ow Noise GaAs MMIC Amplifier 3.5 - 7 GHz | Tyco |
| MAAM37000-A1G | L ow Noise GaAs MMIC Amplifier 3.5 - 7 GHz | Tyco |
| MFP-A2422 | GOAT ANTI ANTI-MOUSE IGG G (H+L) A ANTIBODY | Mo Bi Tec |
| MGF0904 | L /S BAND POWER GaAs FET | Mitsubishi |