Infineon Technologies has extended its OptiMOS 5 portfolio with the addition of 80V and 100V variants.
Optimised for applications requiring high switching frequencies, OptiMOS 5 MOSFETs are said to offer significant reductions in on-state resistance (RDS(on)) compared to the previous generation. According to Infineon, this can be up to 45% less for the 80V version and up to 24% less for the 100V part. Lower resistance means there is less need to parallel parts, hence reduced material cost.
Meanwhile, the OptiMOS 5 80V variant offers 38% reduction in output charge and the OptiMOS 5 100V variant a 25% reduction. Less output charge, the company adds, means reduced switching losses and lower voltage overshoot in hard switching topologies and synchronous rectification.
The additions to the OptiMOS 5 family are available in seven packages: SuperSO8; S308; TO-Leadless; TO-220; TO-220 FullPAK; D²PAK; and D²PAK 7Pin. RDS(on) ranges from 1 to 4 mO, 4 to 8 mO and 8 to 12 mO for the 80V device and from 1 to 4 mO, 4 to 8 mO and 8 to 10 mO for the 100V variant.
Author
Graham Pitcher
Source: www.newelectronics.co.uk