Archive : 26 August 2026 год

ROHM has introduced its 4th-generation 650V IGBTs designed for electric vehicle auxiliary systems and industrial motor/compressor inverters. The new devices deliver industry-leading low-loss characteristics while providing sufficient short-circuit robustness for reliable operation in demanding environments.

Key Specifications

• Voltage rating: 650 V
• Collector-emitter saturation voltage (V_CE(sat)): 1.55 V
• Short-circuit withstand time: 7 µs (at T_j = 25°C)
• Automotive qualification: AEC-Q101 compliant
• Package options: TO-247N (RGAxxTS65HR / RGAxxTS65EHR series), bare wafer (SG83xxWN series)
• Under development: TO-247-4L package and compact surface-mount versions (TO-263L, top-side cooling)

By redesigning the IGBT structure (including the manufacturing process and edge termination), ROHM achieved higher current density while simultaneously reducing both conduction and switching losses. The low V_CE(sat) of 1.55 V significantly cuts conduction losses, helping to improve system efficiency and reduce heat generation.

Target Applications

• Automotive electric compressors
• High-voltage (HV) heaters in electric vehicles
• Industrial motor and compressor inverters
• Other lower-power auxiliary systems in EVs

While SiC devices are increasingly used in high-power traction inverters, 650V silicon IGBTs remain the preferred solution for many auxiliary and industrial applications where cost, efficiency, and short-circuit robustness are critical.

Source: Electronics For You