Samsung has begun volume production of 64 layer 256Gbit V-NAND flash devices and expects the devices to represent more than 50% of its monthly NAND flash production by the end of 2017.
According to the company, since it began producing an SSD based on 256Gbit V-NAND chips in January, it has been working on a range of V-NAND-based mobile and consumer storage solutions. These include embedded UFS memory, branded solid state drives and external memory cards.
Kye Hyun Kyung, executive vice president of Samsung’s flash product and technology team, said: “We will keep developing next-generation V-NAND products in sync with the global IT industry so that we can contribute to the timeliest launches of new systems and services, in bringing a higher level of satisfaction to consumers.”
The 64 layer 256Gbit V-NAND devices stores 3bit/cell and features a data transfer rate of 1Gbit/s, said to be the fastest among currently available NAND flash memories. Running from a 2.5V supply, the part is said to be 30% more energy efficient than the its 48 layer predecessor and about 20% more reliable.
Author
Graham Pitcher
Source: www.newelectronics.co.uk